Industry: Electronics & Semiconductor
Published Date: 2025-02-14
Pages: 87 Pages
Report ld: 3840600
Request Sample
Customized Report
The global market for Semiconductor Dry Etchant was estimated to be worth US$ million in 2024 and is forecast to a readjusted size of US$ million by 2031 with a CAGR of %during the forecast period 2025-2031.
The fundamental type of etchants is plasma-phase ("dry"). Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma etchers can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals.) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic. Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be anisotropic, i.e., exhibiting a smaller lateral undercut rate than its downward etch rate. Such anisotropy is maximized in deep reactive ion etching. The use of the term anisotropy for plasma etching should not be conflated with the use of the same term when referring to orientation-dependent etching.The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
The global market for semiconductor was estimated at US$ 579 billion in the year 2022, is projected to US$ 790 billion by 2029, growing at a CAGR of 6% during the forecast period. Although some major categories are still double-digit year-over-year growth in 2022, led by Analog with 20.76%, Sensor with 16.31%, and Logic with 14.46% growth, Memory declined with 12.156% year over year. The microprocessor (MPU) and microcontroller (MCU) segments will experience stagnant growth due to weak shipments and investment in notebooks, computers, and standard desktops. In the current market scenario, the growing popularity of IoT-based electronics is stimulating the need for powerful processors and controllers. Hybrid MPUs and MCUs provide real-time embedded processing and control for the topmost IoT-based applications, resulting in significant market growth. The Analog IC segment is expected to grow gradually, while demand from the networking and communications industries is limited. Few of the emerging trends in the growing demand for Analog integrated circuits include signal conversion, automotive-specific Analog applications, and power management. They drive the growing demand for discrete power devices.
This report aims to provide a comprehensive presentation of the global market for Semiconductor Dry Etchant, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of Semiconductor Dry Etchant by region & country, by Type, and by Application.
The Semiconductor Dry Etchant market size, estimations, and forecasts are provided in terms of sales volume (Tons) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Semiconductor Dry Etchant.
MARKET SEGMENTATION
CHAPTER OUTLINE
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of Semiconductor Dry Etchant manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of Semiconductor Dry Etchant in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of Semiconductor Dry Etchant in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.
QYRESEARCH'S STRENGTHS
Unlike generic global market reports, this study combines macro-level industry trends with hyper-local operational intelligence, empowering data-driven decisions across the Compound Chocolate value chain, addressing:
We identify regional market threats and growth prospects to guide your overseas layout.
We adjust product portfolios in line with local consumption habits.
We unpack rivals’ operation strategies for scattered and highly concentrated industries.
We cover competition landscape, full supply chain and quantified market size data, and deliver tailor-made customized surveys to meet your unique business demands.
We own self-owned massive exclusive databases, backed by 19 years of global market research experience across thousands of sectors.
Our team operates 24 hours a day, 365 days a year, enabling ultra-fast report turnaround to respond to your research needs efficiently.
We integrate regional risk assessment, localized product optimization and competitor analysis to deliver actionable market strategies.
All data is cross-verified from multiple industry sources to deliver thorough, precise analysis that supports reliable corporate strategic decisions.
We provide responsive, dedicated after-sales support to resolve all follow-up inquiries about reports, data and industry interpretation.
TABLE OF CONTENTS
1 Market Overview
1.1 Semiconductor Dry Etchant Product Introduction
1.2 Global Semiconductor Dry Etchant Market Size Forecast
1.2.1 Global Semiconductor Dry Etchant Sales Value (2020-2031)
1.2.2 Global Semiconductor Dry Etchant Sales Volume (2020-2031)
1.2.3 Global Semiconductor Dry Etchant Sales Price (2020-2031)
1.3 Semiconductor Dry Etchant Market Trends & Drivers
1.3.1 Semiconductor Dry Etchant Industry Trends
1.3.2 Semiconductor Dry Etchant Market Drivers & Opportunity
1.3.3 Semiconductor Dry Etchant Market Challenges
1.3.4 Semiconductor Dry Etchant Market Restraints
1.4 Assumptions and Limitations
1.5 Study Objectives
1.6 Years Considered
2 Competitive Analysis by Company
2.1 Global Semiconductor Dry Etchant Players Revenue Ranking (2024)
2.2 Global Semiconductor Dry Etchant Revenue by Company (2020-2025)
2.3 Global Semiconductor Dry Etchant Players Sales Volume Ranking (2024)
2.4 Global Semiconductor Dry Etchant Sales Volume by Company Players (2020-2025)
2.5 Global Semiconductor Dry Etchant Average Price by Company (2020-2025)
2.6 Key Manufacturers Semiconductor Dry Etchant Manufacturing Base and Headquarters
2.7 Key Manufacturers Semiconductor Dry Etchant Product Offered
2.8 Key Manufacturers Time to Begin Mass Production of Semiconductor Dry Etchant
2.9 Semiconductor Dry Etchant Market Competitive Analysis
2.9.1 Semiconductor Dry Etchant Market Concentration Rate (2020-2025)
2.9.2 Global 5 and 10 Largest Manufacturers by Semiconductor Dry Etchant Revenue in 2024
2.9.3 Global Top Manufacturers by Company Type (Tier 1, Tier 2, and Tier 3) & (based on the Revenue in Semiconductor Dry Etchant as of 2024)
2.10 Mergers & Acquisitions, Expansion
3 Segmentation by Type
3.1 Introduction by Type
3.1.1 SF6 Gas
3.1.2 HCl Gas
3.1.3 Cl2 Gas
3.1.4 Others
3.2 Global Semiconductor Dry Etchant Sales Value by Type
3.2.1 Global Semiconductor Dry Etchant Sales Value by Type (2020 VS 2024 VS 2031)
3.2.2 Global Semiconductor Dry Etchant Sales Value, by Type (2020-2031)
3.2.3 Global Semiconductor Dry Etchant Sales Value, by Type (%) (2020-2031)
3.3 Global Semiconductor Dry Etchant Sales Volume by Type
3.3.1 Global Semiconductor Dry Etchant Sales Volume by Type (2020 VS 2024 VS 2031)
3.3.2 Global Semiconductor Dry Etchant Sales Volume, by Type (2020-2031)
3.3.3 Global Semiconductor Dry Etchant Sales Volume, by Type (%) (2020-2031)
3.4 Global Semiconductor Dry Etchant Average Price by Type (2020-2031)
4 Segmentation by Application
4.1 Introduction by Application
4.1.1 Silicon Wafer
4.1.2 Metallic Film
4.1.3 SiN
4.1.4 Aluminum Oxide
4.1.5 Photoresist
4.1.6 Others
4.2 Global Semiconductor Dry Etchant Sales Value by Application
4.2.1 Global Semiconductor Dry Etchant Sales Value by Application (2020 VS 2024 VS 2031)
4.2.2 Global Semiconductor Dry Etchant Sales Value, by Application (2020-2031)
4.2.3 Global Semiconductor Dry Etchant Sales Value, by Application (%) (2020-2031)
4.3 Global Semiconductor Dry Etchant Sales Volume by Application
4.3.1 Global Semiconductor Dry Etchant Sales Volume by Application (2020 VS 2024 VS 2031)
4.3.2 Global Semiconductor Dry Etchant Sales Volume, by Application (2020-2031)
4.3.3 Global Semiconductor Dry Etchant Sales Volume, by Application (%) (2020-2031)
4.4 Global Semiconductor Dry Etchant Average Price by Application (2020-2031)
5 Segmentation by Region
5.1 Global Semiconductor Dry Etchant Sales Value by Region
5.1.1 Global Semiconductor Dry Etchant Sales Value by Region: 2020 VS 2024 VS 2031
5.1.2 Global Semiconductor Dry Etchant Sales Value by Region (2020-2025)
5.1.3 Global Semiconductor Dry Etchant Sales Value by Region (2026-2031)
5.1.4 Global Semiconductor Dry Etchant Sales Value by Region (%), (2020-2031)
5.2 Global Semiconductor Dry Etchant Sales Volume by Region
5.2.1 Global Semiconductor Dry Etchant Sales Volume by Region: 2020 VS 2024 VS 2031
5.2.2 Global Semiconductor Dry Etchant Sales Volume by Region (2020-2025)
5.2.3 Global Semiconductor Dry Etchant Sales Volume by Region (2026-2031)
5.2.4 Global Semiconductor Dry Etchant Sales Volume by Region (%), (2020-2031)
5.3 Global Semiconductor Dry Etchant Average Price by Region (2020-2031)
5.4 North America
5.4.1 North America Semiconductor Dry Etchant Sales Value, 2020-2031
5.4.2 North America Semiconductor Dry Etchant Sales Value by Country (%), 2024 VS 2031
5.5 Europe
5.5.1 Europe Semiconductor Dry Etchant Sales Value, 2020-2031
5.5.2 Europe Semiconductor Dry Etchant Sales Value by Country (%), 2024 VS 2031
5.6 Asia Pacific
5.6.1 Asia Pacific Semiconductor Dry Etchant Sales Value, 2020-2031
5.6.2 Asia Pacific Semiconductor Dry Etchant Sales Value by Region (%), 2024 VS 2031
5.7 South America
5.7.1 South America Semiconductor Dry Etchant Sales Value, 2020-2031
5.7.2 South America Semiconductor Dry Etchant Sales Value by Country (%), 2024 VS 2031
5.8 Middle East & Africa
5.8.1 Middle East & Africa Semiconductor Dry Etchant Sales Value, 2020-2031
5.8.2 Middle East & Africa Semiconductor Dry Etchant Sales Value by Country (%), 2024 VS 2031
6 Segmentation by Key Countries/Regions
6.1 Key Countries/Regions Semiconductor Dry Etchant Sales Value Growth Trends, 2020 VS 2024 VS 2031
6.2 Key Countries/Regions Semiconductor Dry Etchant Sales Value
6.2.1 Key Countries/Regions Semiconductor Dry Etchant Sales Value, 2020-2031
6.2.2 Key Countries/Regions Semiconductor Dry Etchant Sales Volume, 2020-2031
6.3 United States
6.3.1 United States Semiconductor Dry Etchant Sales Value, 2020-2031
6.3.2 United States Semiconductor Dry Etchant Sales Value by Type (%), 2024 VS 2031
6.3.3 United States Semiconductor Dry Etchant Sales Value by Application, 2024 VS 2031
6.4 Europe
6.4.1 Europe Semiconductor Dry Etchant Sales Value, 2020-2031
6.4.2 Europe Semiconductor Dry Etchant Sales Value by Type (%), 2024 VS 2031
6.4.3 Europe Semiconductor Dry Etchant Sales Value by Application, 2024 VS 2031
6.5 China
6.5.1 China Semiconductor Dry Etchant Sales Value, 2020-2031
6.5.2 China Semiconductor Dry Etchant Sales Value by Type (%), 2024 VS 2031
6.5.3 China Semiconductor Dry Etchant Sales Value by Application, 2024 VS 2031
6.6 Japan
6.6.1 Japan Semiconductor Dry Etchant Sales Value, 2020-2031
6.6.2 Japan Semiconductor Dry Etchant Sales Value by Type (%), 2024 VS 2031
6.6.3 Japan Semiconductor Dry Etchant Sales Value by Application, 2024 VS 2031
6.7 South Korea
6.7.1 South Korea Semiconductor Dry Etchant Sales Value, 2020-2031
6.7.2 South Korea Semiconductor Dry Etchant Sales Value by Type (%), 2024 VS 2031
6.7.3 South Korea Semiconductor Dry Etchant Sales Value by Application, 2024 VS 2031
6.8 Southeast Asia
6.8.1 Southeast Asia Semiconductor Dry Etchant Sales Value, 2020-2031
6.8.2 Southeast Asia Semiconductor Dry Etchant Sales Value by Type (%), 2024 VS 2031
6.8.3 Southeast Asia Semiconductor Dry Etchant Sales Value by Application, 2024 VS 2031
6.9 India
6.9.1 India Semiconductor Dry Etchant Sales Value, 2020-2031
6.9.2 India Semiconductor Dry Etchant Sales Value by Type (%), 2024 VS 2031
6.9.3 India Semiconductor Dry Etchant Sales Value by Application, 2024 VS 2031
7 Company Profiles
7.1 Solvay
7.1.1 Solvay Company Information
7.1.2 Solvay Introduction and Business Overview
7.1.3 Solvay Semiconductor Dry Etchant Sales, Revenue, Price and Gross Margin (2020-2025)
7.1.4 Solvay Semiconductor Dry Etchant Product Offerings
7.1.5 Solvay Recent Development
7.2 Entegris
7.2.1 Entegris Company Information
7.2.2 Entegris Introduction and Business Overview
7.2.3 Entegris Semiconductor Dry Etchant Sales, Revenue, Price and Gross Margin (2020-2025)
7.2.4 Entegris Semiconductor Dry Etchant Product Offerings
7.2.5 Entegris Recent Development
7.3 CAPCHEM
7.3.1 CAPCHEM Company Information
7.3.2 CAPCHEM Introduction and Business Overview
7.3.3 CAPCHEM Semiconductor Dry Etchant Sales, Revenue, Price and Gross Margin (2020-2025)
7.3.4 CAPCHEM Semiconductor Dry Etchant Product Offerings
7.3.5 CAPCHEM Recent Development
7.4 Daikin
7.4.1 Daikin Company Information
7.4.2 Daikin Introduction and Business Overview
7.4.3 Daikin Semiconductor Dry Etchant Sales, Revenue, Price and Gross Margin (2020-2025)
7.4.4 Daikin Semiconductor Dry Etchant Product Offerings
7.4.5 Daikin Recent Development
8 Industry Chain Analysis
8.1 Semiconductor Dry Etchant Industrial Chain
8.2 Semiconductor Dry Etchant Upstream Analysis
8.2.1 Key Raw Materials
8.2.2 Raw Materials Key Suppliers
8.2.3 Manufacturing Cost Structure
8.3 Midstream Analysis
8.4 Downstream Analysis (Customers Analysis)
8.5 Sales Model and Sales Channels
8.5.1 Semiconductor Dry Etchant Sales Model
8.5.2 Sales Channel
8.5.3 Semiconductor Dry Etchant Distributors
9 Research Findings and Conclusion
10 Appendix
10.1 Research Methodology
10.1.1 Methodology/Research Approach
10.1.1.1 Research Programs/Design
10.1.1.2 Market Size Estimation
10.1.1.3 Market Breakdown and Data Triangulation
10.1.2 Data Source
10.1.2.1 Secondary Sources
10.1.2.2 Primary Sources
10.2 Author Details
10.3 Disclaimer
TABLE OF FIGURES
List of Tables
List of Figures
KEY QUESTIONS ADDRESSED BY THE REPORT
Related Reports
The global market for Semiconductor Dry Etchant was estimated to be worth US$ million in 2025 and is projected to reach US$ million, growing at a CAGR of %from 2026 to 2032.
Published Date: 2026-02-02
Pages: 80
USD 3950.00
(Single User License)
The global Semiconductor Dry Etchant market was valued at US$ million in 2025 and is anticipated to reach US$ million by 2032, at a CAGR of %from 2026 to 2032.
Published Date: 2026-02-02
Pages: 125
USD 2900.00
(Single User License)
The global Semiconductor Dry Etchant market is projected to grow from US$ million in 2024 to US$ million by 2031, at a CAGR of %(2025-2031), driven by critical product segments and diverse end‑use applications, while evolving U.S. tariff policies introduce trade‑cost volatility and supply‑chain uncertainty.
Published Date: 2025-10-03
Pages: 119
USD 4900.00
(Single User License)
The global Semiconductor Dry Etchant market size was US$ million in 2024 and is forecast to a readjusted size of US$ million by 2031 with a CAGR of %during the forecast period 2025-2031.
Published Date: 2025-02-14
Pages: 68
USD 4250.00
(Single User License)
The global market for Semiconductor Dry Etchant was valued at US$ million in the year 2024 and is projected to reach a revised size of US$ million by 2031, growing at a CAGR of %during the forecast period.
Published Date: 2025-02-14
Pages: 80
USD 2900.00
(Single User License)
The fundamental type of etchants is plasma-phase ("dry"). Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma etchers can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals.) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic. Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be anisotropic, i.e., exhibiting a smaller lateral undercut rate than its downward etch rate. Such anisotropy is maximized in deep reactive ion etching. The use of the term anisotropy for plasma etching should not be conflated with the use of the same term when referring to orientation-dependent etching.The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
Published Date: 2024-04-13
Pages: 70
USD 4900.00
(Single User License)
The fundamental type of etchants is plasma-phase ("dry"). Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma etchers can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals.) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic. Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be anisotropic, i.e., exhibiting a smaller lateral undercut rate than its downward etch rate. Such anisotropy is maximized in deep reactive ion etching. The use of the term anisotropy for plasma etching should not be conflated with the use of the same term when referring to orientation-dependent etching.The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
Published Date: 2024-02-19
Pages: 86
USD 3950.00
(Single User License)
The fundamental type of etchants is plasma-phase ("dry"). Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma etchers can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals.) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic. Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be anisotropic, i.e., exhibiting a smaller lateral undercut rate than its downward etch rate. Such anisotropy is maximized in deep reactive ion etching. The use of the term anisotropy for plasma etching should not be conflated with the use of the same term when referring to orientation-dependent etching.The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
Published Date: 2024-02-14
Pages: 78
USD 2900.00
(Single User License)
The global market for Semiconductor Dry Etchant was estimated to be worth US$ million in 2025 and is projected to reach US$ million, growing at a CAGR of %from 2026 to 2032.
Published: 2026-02-02
Pages: 80
The global Semiconductor Dry Etchant market was valued at US$ million in 2025 and is anticipated to reach US$ million by 2032, at a CAGR of %from 2026 to 2032.
Published: 2026-02-02
Pages: 125
The global Semiconductor Dry Etchant market is projected to grow from US$ million in 2024 to US$ million by 2031, at a CAGR of %(2025-2031), driven by critical product segments and diverse end‑use applications, while evolving U.S. tariff policies introduce trade‑cost volatility and supply‑chain uncertainty.
Published: 2025-10-03
Pages: 119
The global Semiconductor Dry Etchant market size was US$ million in 2024 and is forecast to a readjusted size of US$ million by 2031 with a CAGR of %during the forecast period 2025-2031.
Published: 2025-02-14
Pages: 68
The global market for Semiconductor Dry Etchant was valued at US$ million in the year 2024 and is projected to reach a revised size of US$ million by 2031, growing at a CAGR of %during the forecast period.
Published: 2025-02-14
Pages: 80
The fundamental type of etchants is plasma-phase ("dry"). Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma etchers can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals.) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic. Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be anisotropic, i.e., exhibiting a smaller lateral undercut rate than its downward etch rate. Such anisotropy is maximized in deep reactive ion etching. The use of the term anisotropy for plasma etching should not be conflated with the use of the same term when referring to orientation-dependent etching.The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
Published: 2024-04-13
Pages: 70
The fundamental type of etchants is plasma-phase ("dry"). Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma etchers can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals.) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic. Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be anisotropic, i.e., exhibiting a smaller lateral undercut rate than its downward etch rate. Such anisotropy is maximized in deep reactive ion etching. The use of the term anisotropy for plasma etching should not be conflated with the use of the same term when referring to orientation-dependent etching.The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
Published: 2024-02-19
Pages: 86
The fundamental type of etchants is plasma-phase ("dry"). Modern VLSI processes avoid wet etching, and use plasma etching instead. Plasma etchers can operate in several modes by adjusting the parameters of the plasma. Ordinary plasma etching operates between 0.1 and 5 Torr. (This unit of pressure, commonly used in vacuum engineering, equals approximately 133.3 pascals.) The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic. Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be anisotropic, i.e., exhibiting a smaller lateral undercut rate than its downward etch rate. Such anisotropy is maximized in deep reactive ion etching. The use of the term anisotropy for plasma etching should not be conflated with the use of the same term when referring to orientation-dependent etching.The source gas for the plasma usually contains small molecules rich in chlorine or fluorine. For instance, carbon tetrachloride (CCl4) etches silicon and aluminium, and trifluoromethane etches silicon dioxide and silicon nitride. A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.
Published: 2024-02-14
Pages: 78
REPORT COVERAGE
DESCRIPTION
OVERVIEW
MARKET SEGMENTATION
CHAPTER OUTLINE
QYRESEARCH'S STRENGTHS
TABLE OF CONTENTS
TABLE OF FIGURES
RLEATED REPORTS
INTEREST IN THIS REPORT?
Get A Free Sample
Request For Quotation
OR
NEED A CUSTOMIZED REPORT?
Customized Report
Request Sample
Pre-Order Enquiry
Add to Cart
Buy Now