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Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Research Report 2018

Published Date: 2018-06-05   |   Pages: 98   |   Tables: 104   | Report Id: 475191   | Hits: 7 |   Electronics & Semiconductor



This report studies the global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market status and forecast, categorizes the global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market size (value & volume) by manufacturers, type, application, and region. This report focuses on the top manufacturers in United States, Europe, China, Japan, South Korea and Taiwan and other regions.

IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.

IGBT is widely used in various applications such as renewable energy, high voltage direct current (HVDC), motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved durability. Moreover, it supports high input impedance and improved parallel current sharing; thereby, fueling the market growth. However, performance issues, such as current leakage and breakdown, hamper the market growth. Proactive government initiatives to establish HVDCs & smart grids and increase in demand for consumer electronic are expected to provide lucrative opportunities to market players in the near future.

The global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market is valued at xx million US$ in 2017 and will reach xx million US$ by the end of 2025, growing at a CAGR of 12.3% during 2018-2025.

The major manufacturers covered in this report

Fairchild Semiconductor International Inc

STMicroelectronics

ABB Ltd

Hitachi Power Semiconductor Device Ltd

Toshiba Corporation

Mitsubishi Electric Corporation

Infineon Technologies AG

Geographically, this report studies the top producers and consumers, focuses on product capacity, production, value, consumption, market share and growth opportunity in these key regions, covering

United States

EU

China

Japan

South Korea

Taiwan

We can also provide the customized separate regional or country-level reports, for the following regions:

North America

United States

Canada

Mexico

Asia-Pacific

China

India

Japan

South Korea

Australia

Indonesia

Singapore

Rest of Asia-Pacific

Europe

Germany

France

UK

Italy

Spain

Russia

Rest of Europe

Central & South America

Brazil

Argentina

Rest of South America

Middle East & Africa

Saudi Arabia

Turkey

Rest of Middle East & Africa

On the basis of product, this report displays the production, revenue, price, market share and growth rate of each type, primarily split into

Discrete IGBT

IGBT Module

Energy & Power

On the basis of the end users/applications, this report focuses on the status and outlook for major applications/end users, consumption (sales), market share and growth rate for each application, including

Consumer Electronics

Inverter & UPS

Electric Vehicle

Industrial System

Others (Medical Devices & Traction)

The study objectives of this report are:

To analyze and study the global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor capacity, production, value, consumption, status (2013-2017) and forecast (2018-2025);

Focuses on the key Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor manufacturers, to study the capacity, production, value, market share and development plans in future.

Focuses on the global key manufacturers, to define, describe and analyze the market competition landscape, SWOT analysis.

To define, describe and forecast the market by type, application and region.

To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.

To identify significant trends and factors driving or inhibiting the market growth.

To analyze the opportunities in the market for stakeholders by identifying the high growth segments.

To strategically analyze each submarket with respect to individual growth trend and their contribution to the market

To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market

To strategically profile the key players and comprehensively analyze their growth strategies.

In this study, the years considered to estimate the market size of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor are as follows:

History Year: 2013-2017

Base Year: 2017

Estimated Year: 2018

Forecast Year 2018 to 2025

For the data information by region, company, type and application, 2017 is considered as the base year. Whenever data information was unavailable for the base year, the prior year has been considered.

Key Stakeholders

Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Manufacturers

Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Distributors/Traders/Wholesalers

Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Subcomponent Manufacturers

Industry Association

Downstream Vendors

Available Customizations

With the given market data, QYResearch offers customizations according to the company's specific needs. The following customization options are available for the report:

Regional and country-level analysis of the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market, by end-use.

Detailed analysis and profiles of additional market players.

Licenses Type

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Multiple users can access the report

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