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2020-11-05      Electronics & Semiconductor

Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Report, History and Forecast 2015-2026, Breakdown Data by Manufacturers, Key Regions, Types and Application


IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.

IGBT is widely used in various applications such as renewable energy, high voltage direct current (HVDC), motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved durability. Moreover, it supports high input impedance and improved parallel current sharing; thereby, fueling the market growth. However, performance issues, such as current leakage and breakdown, hamper the market growth. Proactive government initiatives to establish HVDCs & smart grids and increase in demand for consumer electronic are expected to provide lucrative opportunities to market players in the near future.

Market Analysis and Insights: Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market

The global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market size is projected to reach US$ XX million by 2026, from US$ XX million in 2020, at a CAGR of 12.3% during 2021-2026.

Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Scope and Segment

The global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on revenue and forecast by region (country), by Type, and by Application for the period 2015-2026.

The major regions covered in the report are North America, Europe, Asia-Pacific, South America, Middle East & Africa, etc. The report has specifically covered major countries including U.S., Canada, Germany, France, U.K., Italy, Russia, China, Japan, South Korea, India, Australia, Taiwan, Indonesia, Thailand, Malaysia, Philippines, Vietnam, Mexico, Brazil, Turkey, Saudi Arabia, U.A.E, etc. It includes revenue and volume analysis of each region and their respective countries for the forecast years. It also contains country-wise volume and revenue from the year 2015 to 2020. Additionally, it provides the reader with accurate data on volume sales according to the consumption for the same years.

By the product type, the market is primarily split into

High Voltage

Medium Voltage

Low Voltage

By the end users/application, this report covers the following segments

Consumer Electronics

Inverter & UPS

Electric Vehicle

Industrial System

Others (Medical Devices & Traction)

Energy & Power

Competitive Landscape:

The report provides a list of all the key players in the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market along with a detailed analysis of the strategies, which the companies are adopting. The strategies mainly include new product Developments, research, and Developments, and also provides revenue shares, company overview, and recent company Developmentss to remain competitive in the market.

The Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor key manufacturers in this market include:

Fairchild Semiconductor International Inc

STMicroelectronics

ABB Ltd

Hitachi Power Semiconductor Device Ltd

Toshiba Corporation

Mitsubishi Electric Corporation

Infineon Technologies AG

Licenses Type

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Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market

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