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Discrete power devices refer to electronic devices with individual functions and functions that cannot be disassembled. According to different chip structures and functions, they can be divided into diodes, triodes, bridge rectifiers, thyristors, etc., and can be divided from the perspective of power dissipation (or rated current) For small signal devices, power devices.


Discrete power devices are electronic devices based on semiconductor materials with fixed single characteristics and functions. The device is mainly composed of a chip, a lead/frame, and a plastic casing. The chip determines device functions, such as rectification, voltage stabilization, switching, protection, etc. The lead/frame realizes the connection between the chip and the external circuit and the heat export. Provide protection for the chip and internal structure, ensure the stable realization of its functions, and are highly related to core performance such as heat dissipation.


The discrete power devices are mainly produced in North America, Europe, Japan, Europe, China mainland, China Taiwan, South Korea and Southeast Asia, etc. The global key players are mainly from Europe, US, Japan, China mainland, and China Taiwan. In 2022, the global top ten players hold a share nearly 60 percent in terms of revenue.


In terms of product segment, the MOSFETs is the largest segment, with a share of 35%. IGBTs now are the second segment, and will be the largest segment in next few years, driven by the demand from electric vehicle (EV), PV and wind power, etc.


In next several years, the SiC power devices like SiC SBD, SiC MOSFETs, and automotive grade IGBT will be the fast-growing products.


Global discrete power devices market was valued at US$ 35,278 million in 2022 and is anticipated to reach US$ 61,355 million by 2029, witnessing a CAGR of 7.67% during the forecast period 2023-2029. The influence of COVID-19 and the Netherlands-Ukraine War were considered while estimating market sizes.


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